Charge pumping as a tool for characterization of electrophysical parameters of new-generation MIS devices

Aim of project
Development of physical models of phenomena affecting the process of charge pumping in New-generation MIS devices (MIS devices with SiGe channel, alternative gate dielectrics, MIS SOI devices with thin active layer), development of efficient methods of new-generation MIS structure characterization based on charge pumping, building a system for characterization of new-generation MIS structures by means of charge pumping

Expected results
Development of models of charge pumping in new-generation MIS structures, development of a system for extensive characterization of new-generation MIS structures by means of charge pumping, joining international research on newgeneration MIS structures