Contact and assembly technologies for high temperature, high power and high frequency applications of SiC devices
Supervisor: Ryszard Kisiel, PhD
e-mail: rkisiel@elka.pw.edu.pl
tel. +48 22 234 78 52
fax. +48 22 628 87 40
Beginning: 2007-04-01
End: 2010-03-31
Aim of project
The aim of the project is to elaborate the ohmic contact technology for SiC devices as well as assembly technique for electrical and mechanical connection between SiC structure and package. An elaborated package shall be able to work in high temperature (up to 400 C), high power and high frequency application.
Expected results
Elaborate the ohmic contact technology for SiC devices as well as assembly technique for electrical and mechanical connection between SiC structure and package. An elaborated package shall be able to work in high temperature (up to 400 C), high power and high frequency application.
Project coordinator
prof. dr hab Jan Szmidt
Polish version