Design of high power microwave devices with SiC and GaN components

Aim of project
The aim of the project is to design high-temperature high-power microwave devices including DC supply blocks with the use of SiC MESFET, GaN HEMT and low frequency SiC components such as MOSFET, and rectifying Schottky diodes. The design procedures will be supported with multidimensional electro-thermal modeling and measurement techniques to determine frequency characteristics and thermal response of active elements.

The results of the project will be put into practice in telecommunication companies and by producers of military equipments. The project is a joint venture of the Institute of Radioelectronics WUT and the Electronic Department of the Technical University of Koszalin.

Expected results
Within the framework of the project the intended tasks are as follows:
High-temperature AC-DC and DC-DC converters with effi - ciency of more than 85%;
High power microwave amplifi ers of up to 100W output power level for L and S-band;
Measurement systems of temperature response of Sic and GaN devices.