Design of semiconductor T/R module for X-band. As part of the external project “Advanced radar technologies applied for the military and civilian purpose”

Aim of project
The main aim of the project is realization of universal T/R modules for X-band providing digital control over such parameters as: pulse duration, pulse delay with respect to the triggering signal, tunable operation point for transistors in power amplifiers. T/R modules are applicable for radiolocation systems of both the older (e.g. with electronic beam steering) and the newer generation, in which experiments with the new shape of pulse will be possible, thanks to the SDR (software defined radio) idea. The most basic problem during the designing process of the device is related to the design of the high power amplifier, precisely (in the present case) with GaAs FET transistors, thermal delays of duration (very short) comparable with a radiolocation pulse. The project consists of several tasks, the main of which is to design and realize a universal T/R module. Other tasks concern: optimization of receiving input circuits with respect to noise level and durability, making power supply and control block universal for SDR application. Completing these tasks is going to enable compilation of general methodology for construction of modern devices for professional radiolocation and radiocommunication systems applying newest semiconductor devices as well as using applied SDR ideas.

Expected results
The final result of the project is realization of 2 prototypes of universal T/R modules for X-band accompanied with detailed documentation.