Dielectric layers produced by means of plasma methods for AIII-N (GaN, AlGaN) semiconductor structure technology

Aim of project
The main aim of the project is to investigate passivation efficiency of GaN and AlGaN semiconductor surfaces by means of nitride (AlN, Mg3N2), diamond and diamond-like layers deposition. Other dielectric layers, which turn out to be useful during research, may also be investigated. Moreover, the influence of thin gate dielectric layer made of the above-mentioned materials in HEMT transistor structures, is going to be investigated. Dielectric layers will be deposited in a low-temperature, plasma- assisted chemical vapor phase deposition process, as well as reactive sputtering in plasma.

Expected results
The final result of the investigations will be a set of reliable process parameters, which give the best passivating effect of GaN and AlGaN surface and allow for best electrical parameters in case of HEMT transistor. The research will reveal chemical and physical mechanisms, which influence the quality of the semiconductor-dielectric interface, adhesion and other parameters that are taken into consideration by the authors.