Thin barium titanate layers for microelectronics demand – technology, characterization and applications

Aim of project
The main goal of the project is development of the fabrication method of high-k and high-resistive BaTiO3 thin films and investigation of its properties from the viewpoint of electronics applications.

Expected results
Development of the fabrication technology (BaTiO3 deposition, selective etching) will allow producing of the test structures, like metal-insulator-metal (MIM), metal-insulator-semuconductor (MIS) capacitors, field-effect transistors (FETs) and ion sensitive field-effect transistors (ISFETs) with discussed layers as a gate insulator.