Prof. Thomas Skotnicki worked at France Telecom (1985-99) and STMicroelectronics (as Technical Vice President and in other posts). He is the creator of UTBB FDSOI (Ultra-thin Body and Buried oxide Fully Depleted SOI) technology, used for the production of transistors and implemented in STMicroelectronics, GF and Samsung, as well as MASTAR (Model for Analog and Digital Simulation of MOS Transistors) models, which in the years 2005-2015 served the ITRS (International Technology Roadmap for Semiconductors) committee to develop forecasts for the development of MOS transistor designs.

Currently, Prof. Skotnicki is associated with the Warsaw University of Technology (Faculty of Electronics and Information Technology and CEZAMAT Center for Advanced Materials and Technologies) and the Institute of High Pressure Physics of the Polish Academy of Sciences.

Prof. Skotnicki is the author of more than 80 patents, more than 400 publications and several book chapters. His H-index (an indicator showing the importance of scientific works of a given author) is 50.

Prof. Skotnicki is a Fellow in IEEE – an international technical organization dealing with the development of technology for the benefit of humanity, he is on the committees of the IEEE JJ Ebers and Frederik Philips awards, and on the committees of all major conferences in his field. He was a co-editor of the IEEE TED journal for 8 years. He is the supervisor of 32 post-doctoral candidates, winner of the Rappaport Award (2000) and one of the implementers of the CENTERA grant from the Foundation for Polish Science (MAB 8/2017), under which he develops applications of THz radiation.

The European SEMI Award is given to individuals or teams for their significant contribution to the European semiconductor, microsystems, photovoltaics and display industries. The prize has been awarded since 1989.